Date of Award

Spring 2006

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical & Computer Engineering

Program/Concentration

Electrical Engineering

Committee Director

Hani Elsayed-Ali

Committee Member

Sacharia Albin

Committee Member

Helmut Baumgart

Committee Member

Nurul Abedkn

Committee Member

Tamer Refaat

Call Number for Print

Special Collections LD4331.E55 G33 2006

Abstract

A 1x1024 InGaAs linear hybrid focal plane array (FPA) with CMOS readout was characterized at room temperature to analyze its electrical and optical properties and to measure its performance parameters.

The most important parameter of an FPA is the gain constant K, which allows conversion of the FPA output measurement unit from digital counts into the number of generated signal electrons. For FPAs with CMOS readout, the commonly used meanvariance method for determining K often underestimates its value. A more reliable method for finding K is the photon transfer technique, which is developed for FPAs with CCD readout. This technique is verified by applying it to a group of custom-designed Si CCDs. The photon transfer technique is then applied to the InGaAs FPA with CMOS readout to find its K-value. However, it was found that the background noise of the InGaAs FPA is excessively high up to saturation; thus another method using mean square error minimization is used in conjunction with the photon transfer technique.

An experimental setup and procedure for measuring the signal and noise of the array associated with the camera at varying exposure level, exposure time, and radiation wavelength were constructed. The K-value of the InGaAs FPA was obtained including the read noise and full-well capacity. The responsivity, quantum efficiency, detectivity, dark current, and linearity were also obtained and analyzed.

To validate the experimental data for quantum efficiency, a theoretical model of the quantum efficiency of the InGaAs photodetectors making up the FPA was constructed based on optical properties of InGaAs material.

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DOI

10.25777/nxs5-wg28

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