Date of Award

Fall 1991

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical & Computer Engineering

Program/Concentration

Electrical Engineering

Committee Director

V. K. Lakdawala

Committee Member

Glenn A. Gerdin

Committee Member

Hassan H. Erkaya

Call Number for Print

Special Collections LD4331.E55K34

Abstract

Cathodoluminescence in Zn doped GaAs and ZnSe, the materials of interest for electron-beam controlled semiconductor switches, has been investigated. A new diagnostic technique, using telescopic setup of lenses, was developed to study the spatially resolved cathodoluminescence. The setup eliminated the light, other than rays from the sample, parallel to the optical axis, resulting in an enhanced spatial resolution. At high e-beam energies, light was detected, from the Zn layer region in the GaAs. It is proposed to be due to the radiative recombination of electron-hole pairs, created by the e-beam. For the polycrystalline ZnSe no light emission was detected. This was possibly due to the crystal defects present in the material, resulting in non-radiative recombination of the electron-hole pairs. The internal quantum efficiency of the Zn doped GaAs was calculated, and was compared with results obtained from previous modeling studies.

Rights

In Copyright. URI: http://rightsstatements.org/vocab/InC/1.0/ This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).

DOI

10.25777/m709-fg56

Download

Share

COinS