Date of Award

Summer 2012

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical & Computer Engineering

Program/Concentration

Electrical Engineering

Committee Director

Helmut Baumgart

Committee Member

Sylvain Marsillac

Committee Member

Hani Elsayed-Ali

Call Number for Print

Special Collections LD4331.E55 N66 2012

Abstract

Alloys composed of bismuth, antimony and telluride compounds exhibit very high figure of merit ZT values at relatively low temperatures, making them exceptional thermoelectric materials. Advancement in thermoelectric devices and applications hinges on increasing ZT, which is a ratio of the thermoelectric power factor to the thermal conductivity. One of the proposed avenues to achieving this goal is the use of low dimensional structures such as quantum wells, quantum dots, superlattices (SL) and nanolaminates to affect heat transport. SL structures can effectively confine charge carriers as well as scatter phonons which contribute significantly to thermal conductivity. In this thesis, the Angstrom precision of the novel technique of Atomic Layer Deposition (ALD) has been employed to synthesize new nanostructures such as superlattices and nanolaminates of Sb2Te3 and Bi2Te3 layers for innovative thermoelectric device applications. ALD thin film growth takes advantage of self-limiting surface reactions between the chemical precursor and surface species of the substrate. This feature enables precise control of thin film layer thickness, stoichiometry, uniformity, and conformity. Recently, the development of suitable chemical ALD precursors for metal tellurides has triggered increasing research activity in SL structures of BhTe3and Sb2Te3.

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DOI

10.25777/d2xr-x563

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