Date of Award

Fall 2009

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical & Computer Engineering

Program/Concentration

Electrical Engineering

Committee Director

Helmut Baumgart

Committee Member

Gon Namkoong

Committee Member

Vijayan Asari

Call Number for Print

Special Collections LD4331.E55 T735 2009

Abstract

ln this thesis a comprehensive analysis is presented on nano-scale thin films of platinum deposited with Angstrom resolution by Atomic Layer Deposition (ALD) technology utilizing the Cambridge Nanotech Savannah 100 ALD system. Physical characterizations of film thickness, film morphology, and surface roughness of the deposited platinum were all performed before and after rapid thermal annealing (RTA) and as a function of forming gas annealing (FGA). Noble metal thin films of platinum were deposited on four inch wafers of p-type boron doped &100& oriented silicon (Si) substrates. The ALD film thickness was measured with a novel method utilizing the linear dependence of ALD Pt film deposition cycles on electrical sheet conductance. The experimental sheet conductance graph was calibrated by absolute Pt film thickness measurements using cross-sectional transmission electron microscopy (TEM). The ALD Pt film surface morphology was characterized using atomic force microscopy (AFM). Sheet resistance of the ALD platinum films was determined by using electrical four-point- probe measurements. The newly developed ALD Pt process was successfully extended to such challenging applications as providing a third electrode to active zeta potential controlled Electroosmotic pumps in nano-porous membranes. Finally, thin nano-scaled transparent electrical contacts required for photovoltaic cells in porous anodic aluminum oxide (AAO) templates were successfully implemented by a newly developed ALD ZnO process.

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DOI

10.25777/medv-p584

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