Document Type

Article

Publication Date

2008

DOI

10.1063/1.3041493

Publication Title

Journal of Applied Physics

Volume

104

Issue

12

Pages

124302 (1-5)

Abstract

The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions.© 2008 American Institute of Physics. [DOI: 10.1063/1.3041493]

Original Publication Citation

Hegazy, M. S., & Elsayed-Ali, H. E. (2008). Nonthermal laser-induced formation of crystalline Ge quantum dots on Si(100). Journal of Applied Physics, 104(12), 124302. doi:10.1063/1.3041493