Document Type

Article

Publication Date

2002

DOI

10.1063/1.1429796

Publication Title

Journal of Applied Physics

Volume

91

Issue

3

Pages

1256-1264

Abstract

Atomic hydrogen cleaning of the InP(100) surface has been investigated using quantitative reflection high-energy electron diffraction. The quantum efficiency of the surface when activated to negative electron affinity was correlated with surface morphology. The electron diffraction patterns showed that hydrogen cleaning is effective in removing surface contaminants, leaving a clean, ordered, and (2×4)-reconstructed surface. After activation to negative electron affinity, a quantum efficiency of ∼6% was produced in response to photoactivation at 632 nm. Secondary electron emission from the hydrogen-cleaned InP(100)-(2×4) surface was measured and correlated to the quantum efficiency. The morphology of the vicinal InP(100) surface was investigated using electron diffraction. The average terrace width and adatom-vacancy density were measured from the (00) specular beam at the out-of-phase condition. With hydrogen cleaning time, there was some reduction in the average terrace width. The surface quality was improved with hydrogen cleaning, as indicated by the increased (00) spot intensity-to-background ratio at the out-of-phase condition, and improved quantum efficiency after activation to negative electron affinity. © 2002 American Institute of Physics. [DOI: 10.1063/1.1429796]

Original Publication Citation

Hafez, M. A., & Elsayed-Ali, H. E. (2002). Atomic hydrogen cleaning of InP(100): Electron yield and surface morphology of negative electron affinity activated surfaces. Journal of Applied Physics, 91(3), 1256-1264. doi:10.1063/1.1429796