Document Type
Article
Publication Date
2005
DOI
10.1063/1.1949285
Publication Title
Applied Physics Letters
Volume
86
Issue
24
Pages
243104 (1-3)
Abstract
Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]
Original Publication Citation
Hegazy, M. S., & Elsayed-Ali, H. E. (2005). Self-assembly of Ge quantum dots on Si(100)- 2×1 by pulsed laser deposition. Applied Physics Letters, 86(24), 243104. doi:10.1063/1.1949285
Repository Citation
Hegazy, M. S. and Elsayed-Ali, H. E., "Self-Assembly of Ge Quantum Dots on Si(100)- 2×1 by Pulsed Laser Deposition" (2005). Electrical & Computer Engineering Faculty Publications. 104.
https://digitalcommons.odu.edu/ece_fac_pubs/104
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