Document Type

Article

Publication Date

2005

DOI

10.1063/1.1949285

Publication Title

Applied Physics Letters

Volume

86

Issue

24

Pages

243104 (1-3)

Abstract

Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]

Original Publication Citation

Hegazy, M. S., & Elsayed-Ali, H. E. (2005). Self-assembly of Ge quantum dots on Si(100)- 2×1 by pulsed laser deposition. Applied Physics Letters, 86(24), 243104. doi:10.1063/1.1949285