Journal of Applied Physics
Atomic hydrogen cleaning is used to clean InP(100) negative electron affinity photocathodes. Reflection high-energy electron diffraction patterns of reconstructed, phosphorus-stabilized, InP(100) surfaces are obtained after cleaning at ∼400 °C. These surfaces produce high quantum efficiency photocathodes (∼8.5%), in response to 632.8 nm light. Without atomic hydrogen cleaning, activation of InP to negative electron affinity requires heating to ∼530 °C. At this high temperature, phosphorus evaporates preferentially and a rough surface is obtained. These surfaces produce low quantum efficiency photocathodes (∼0.1%). The use of reflection high-energy electron diffraction to measure the thickness of the deposited cesium layer during activation by correlating diffraction intensity with photoemission is demonstrated. © 1998 American Institute of Physics.
Original Publication Citation
Elamrawi, K. A., Hafez, M. A., & Elsayed-Ali, H. E. (1998). Atomic hydrogen cleaning of InP(100) for preparation of a negative electron affinity photocathode. Journal of Applied Physics, 84(8), 4568-4572. doi:10.1063/1.368701
Elamrawi, K. A.; Hafez, M. A.; and Elsayed-Ali, H. E., "Atomic Hydrogen Cleaning of InP(100) for Preparation of a Negative Electron Affinity Photocathode" (1998). Electrical & Computer Engineering Faculty Publications. 121.