Document Type

Article

Publication Date

2016

DOI

10.1109/ted.2016.2598855

Publication Title

IEEE Transactions on Electron Devices

Volume

63

Issue

10

Pages

3851-3856

Abstract

We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100-MHz applied sine wave, which swings from accumulation to strong inversion, is digitized directly using an oscilloscope from the MOS capacitor under test. A C-V curve can be constructed directly from this data but is severely distorted due to nonideal behavior of real measurement systems. The key advance of this paper is to extract the system response function using the same measurement setup and a known MOS capacitor. The system response correction to the measured C-V curve of the unknown MOS capacitor can then be done by simple deconvolution. No deskewing and/or leakage current correction is necessary, making it a very simple and quick measurement. Excellent agreement between the new fast C-V method and C-V measured conventionally by an LCR meter is achieved. The total time required for measurement and analysis is approximately 2 s, which is limited by our equipment.

Comments

NOTE: This is the author's pre-print version of a work that was published in IEEE Transactions on Electron Devices. The final version was published as:

Kim, J. H., Shrestha, P. R., Campbell, J. P., Ryan, J. T., Nminibapiel, D., Kopanski, J. J., & Cheung, K. P. (2016). Rapid and accurate C-V measurements. IEEE Transactions on Electron Devices, 63(10), 3851-3856. doi:10.1109/ted.2016.2598855

Available at: http://dx.doi.org/10.1109/ted.2016.2598855

Original Publication Citation

Kim, J. H., Shrestha, P. R., Campbell, J. P., Ryan, J. T., Nminibapiel, D., Kopanski, J. J., & Cheung, K. P. (2016). Rapid and accurate C-V measurements. IEEE Transactions on Electron Devices, 63(10), 3851-3856. doi:10.1109/ted.2016.2598855

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