Journal of Laser Micro/Nanoengineering
Deposition of indium on Si(100) substrates is performed under ultrahigh vacuum with an amplified Ti:sapphire laser (130 fs) at wavelength of 800 nm and laser fluence of 0.5 J/cm2. Indium films are grown at room temperature and at higher substrate temperatures with a deposition rate of similar to 0.05 ML/pulse. Reflection high-energy electron diffraction (RHEED) is used during the deposition to study the growth dynamics and the surface structure of the grown films. The morphology of the grown films is examined by ex situ atomic force microscopy (AFM). At room temperature indium is found to form epitaxial two-dimensional layers on the Si(100)-(2x1) surface followed by three-dimensional islands. AFM images show different indium island morphologies such as hexagonal and elongated shapes. At substrate temperatures of 400-420 °C, RHEED intensity oscillations are observed during film growth indicating that the indium film grows in the layer-by-layer mode.
Original Publication Citation
Hafez, M. A., & Elsayed-Ali, H. E. (2006). Femtosecond pulsed laser deposition of indium on Si(100). Journal of Laser Micro/Nanoengineering, 1(1), 44-47.
Hafez, Mohamed A. and Elsayed-Ali, Hani E., "Femtosecond Pulsed Laser Deposition of Indium on Si (100)" (2006). Electrical & Computer Engineering Faculty Publications. 63.