GaAs Photoconductive Closing Switches with High Dark Resistance and Microsecond Conductivity Decay

Authors

M. S. Mazzola, Old Dominion University
K. H. Schoenbach, Old Dominion UniversityFollow
V. K. Lakdawala, Old Dominion UniversityFollow
R. Germer, Old Dominion University
G. M. Loubriel
F. J. Zutavern

Document Type

Article

Publication Date

1989

DOI

10.1063/1.100879

Publication Title

Applied Physics Letters

Volume

54

Issue

8

Pages

742-744

Abstract

Silicon-doped n-type gallium arsenide crystals, compensated with diffused copper, were studied with respect to their application as photoconductive, high-power closing switches. The attractive features of GaAs:Cu switches are their high dark resistivity, their efficient activation with Nd:YAG laser radiation, and their microsecond conductivity decay time constant. In the authors' experiment, electric fields are high as 19 kV/cm were switched, and current densities of up to 10 kA/cm² were conducted through a closely compensated crystal. At field strengths greater than approximately 10 kV/cm, a voltage `lock-on' effect was observed.

Original Publication Citation

Mazzola, M. S., Schoenbach, K. H., Lakdawala, V. K., Germer, R., Loubriel, G. M., & Zutavern, F. J. (1989). GaAs photoconductive closing switches with high dark resistance and microsecond conductivity decay. Applied Physics Letters, 54(8), 742-744. doi:10.1063/1.100879

Repository Citation

Mazzola, M. S.; Schoenbach, K. H.; Lakdawala, V. K.; Germer, R.; Loubriel, G. M.; and Zutavern, F. J., "GaAs Photoconductive Closing Switches with High Dark Resistance and Microsecond Conductivity Decay" (1989). Electrical & Computer Engineering Faculty Publications. 87.
https://digitalcommons.odu.edu/ece_fac_pubs/87