Document Type
Article
Publication Date
1988
DOI
10.1063/1.341022
Publication Title
Journal of Applied Physics
Volume
63
Issue
7
Pages
2460-2463
Abstract
A concept for a bulk semiconductor switch is presented, where the conductivity is increased and reduced, respectively, through illumination with light of different wavelengths. The increase in conductivity is accomplished by electron ionization from deep centers and generation of bound holes. The reduction of conductivity is obtained by hole ionization from the excited centers and subsequent recombination of free electrons and holes. The transient behavior of electron and hole density in a high power semiconductor (GaAs:Cu) switch is computed by means of a rate equation model. Changes in conductivity by five orders of magnitude can be obtained.
Original Publication Citation
Schoenbach, K. H., Lakdawala, V. K., Germer, R., & Ko, S. T. (1988). An optically controlled closing and opening semiconductor switch. Journal of Applied Physics, 63(7), 2460-2463. doi:10.1063/1.341022
Repository Citation
Schoenbach, K. H.; Lakdawala, V. K.; Germer, R.; and Ko, S. T., "An Optically Controlled Closing and Opening Semiconductor Switch" (1988). Electrical & Computer Engineering Faculty Publications. 89.
https://digitalcommons.odu.edu/ece_fac_pubs/89
Included in
Electronic Devices and Semiconductor Manufacturing Commons, Physics Commons, Semiconductor and Optical Materials Commons