Influence of Copper Doping on the Performance of Optically Controlled GaAs Switches

Authors

St. T. Ko, Old Dominion University
V. K. Lakdawala, Old Dominion UniversityFollow
K. H. Schoenbach, Old Dominion UniversityFollow
M. S. Mazzola, Old Dominion University

Document Type

Article

Publication Date

1990

DOI

10.1063/1.345780

Publication Title

Journal of Applied Physics

Volume

67

Issue

2

Pages

1124-1126

Abstract

The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (N_Cu/N_Si) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.

Original Publication Citation

Ko, S. T., Lakdawala, V. K., Schoenbach, K. H., & Mazzola, M. S. (1990). Influence of copper doping on the performance of optically controlled GaAs switches. Journal of Applied Physics, 67(2), 1124-1126. doi:10.1063/1.345780

Repository Citation

Ko, St. T.; Lakdawala, V. K.; Schoenbach, K. H.; and Mazzola, M. S., "Influence of Copper Doping on the Performance of Optically Controlled GaAs Switches" (1990). Electrical & Computer Engineering Faculty Publications. 90.
https://digitalcommons.odu.edu/ece_fac_pubs/90