Document Type
Article
Publication Date
2011
DOI
10.1063/1.3567918
Publication Title
Journal of Applied Physics
Volume
109
Issue
8
Pages
084320 (1-6)
Abstract
The effect of nanosecond pulsed laser excitation on surface diffusion during the growth of Ge on Si(100) at 250 °C was studied. In situ reflection high-energy electron diffraction was used to measure the surface diffusion coefficient while ex situ atomic force microscopy was used to probe the structure and morphology of the grown quantum dots. The results show that laser excitation of the substrate increases the surface diffusion during the growth of Ge on Si(100), changes the growth morphology, improves the crystalline structure of the grown quantum dots, and decreases their size distribution. A purely electronic mechanism of enhanced surface diffusion of the deposited Ge is proposed. © 2011 American Institute of Physics. [doi:10.1063/1.3567918]
Original Publication Citation
Er, A. O., & Elsayed-Ali, H. E. (2011). Electronically enhanced surface diffusion during Ge growth on Si(100). Journal of Applied Physics, 109(8), 084320. doi:10.1063/1.3567918
Repository Citation
Er, Ali Orguz and Elsayed-Ali, Hani E., "Electronically Enhanced Surface Diffusion During Ge Growth on Si(100)" (2011). Physics Faculty Publications. 25.
https://digitalcommons.odu.edu/physics_fac_pubs/25
Included in
Atomic, Molecular and Optical Physics Commons, Electronic Devices and Semiconductor Manufacturing Commons, Semiconductor and Optical Materials Commons