Document Type

Article

Publication Date

2011

DOI

10.1063/1.3567918

Publication Title

Journal of Applied Physics

Volume

109

Issue

8

Pages

084320 (1-6)

Abstract

The effect of nanosecond pulsed laser excitation on surface diffusion during the growth of Ge on Si(100) at 250 °C was studied. In situ reflection high-energy electron diffraction was used to measure the surface diffusion coefficient while ex situ atomic force microscopy was used to probe the structure and morphology of the grown quantum dots. The results show that laser excitation of the substrate increases the surface diffusion during the growth of Ge on Si(100), changes the growth morphology, improves the crystalline structure of the grown quantum dots, and decreases their size distribution. A purely electronic mechanism of enhanced surface diffusion of the deposited Ge is proposed. © 2011 American Institute of Physics. [doi:10.1063/1.3567918]

Original Publication Citation

Er, A. O., & Elsayed-Ali, H. E. (2011). Electronically enhanced surface diffusion during Ge growth on Si(100). Journal of Applied Physics, 109(8), 084320. doi:10.1063/1.3567918