Metal Modulation Epitaxy Growth for Extremely High Hole Concentrations Above 10(19) cm(-3) in GaN

Authors

Gon Namkoong, Old Dominion UniversityFollow
Elaissa Trybus
Kyung Keun Lee
Michael Moseley
W. Alan Doolittle
David C. Look

Document Type

Article

Publication Date

2007

DOI

10.1063/1.3005640

Publication Title

Applied Physics Letters

Volume

93

Issue

17

Pages

172112 (3 pages)

Abstract

The free hole carriers in GaN have been limited to concentrations in the low 10¹⁸ cm⁻³ range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ~10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ~1.5 x 10¹⁹ cm⁻³.

© 2008 American Institute of Physics.

Original Publication Citation

Namkoong, G., Trybus, E., Lee, K. K., Moseley, M., Doolittle, W. A., & Look, D. C. (2008). Metal modulation epitaxy growth for extremely high hole concentrations above 10¹⁹ cm-³ in GaN. Applied Physics Letters, 93(17), 172112. doi:10.1063/1.3005640

Repository Citation

Namkoong, G., Trybus, E., Lee, K. K., Moseley, M., Doolittle, W. A., & Look, D. C. (2008). Metal modulation epitaxy growth for extremely high hole concentrations above 10¹⁹ cm-³ in GaN. Applied Physics Letters, 93(17), 172112. doi:10.1063/1.3005640

ORCID

0000-0002-9795-8981 (Namkoong)