Review of Scientific Instruments
The electric field dependence of the absorption coefficient in semi‐insulating GaAs at the absorption edge was measured in a high‐voltage pulsed experiment. Pulse duration was kept below 50 ns in order to avoid thermal effects. A GaAs laser diode was used as a probe light source with wavelength varied from 902 to 911 nm. For fields up to 40 kV/cm the absorption coefficient increased from 3 to 17 cm−1 at 902 nm, with smaller absolute increases evident at the longer wavelengths. Calculation from theory was consistent with this behavior. The spatial variation of the electric field was also recorded with a CCD camera. This method was used as a diagnostic technique to study the field distribution during the switching cycle of a high‐power photoconductive switch. The described system could be used as a simple electric field probe with temporal resolution of 100 ps, or as a field mapping system with spatial resolution approaching 1 μm.
Original Publication Citation
Peterkin, F. E., Block, R., & Schoenbach, K. H. (1995). Electric field mapping system with nanosecond temporal resolution. Review of Scientific Intruments, 66(4), 2960-2966. doi:10.1063/1.1145583
Peterkin, F. E.; Block, R.; and Schoenbach, K. H., "Electric Field Mapping System With Nanosecond Temporal Rosolution" (1995). Bioelectrics Publications. 246.