Document Type
Article
Publication Date
1995
Publication Title
Journal of Applied Physics
Volume
77
Issue
10
Pages
5208-5214
DOI
10.1063/1.359269
Abstract
We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low‐energy phototransistor application for the GaAs:Cu material system is presented.
Original Publication Citation
Schoenbach, K. H., Joshi, R. P., Peterkin, F., Druce, R. L., S., M. M., H., S. K., . . . T., K. S. (1995). Supralinear photoconductivity of copper doped semi‐insulating gallium arsenide. Journal of Applied Physics, 77(10), 5208-5214. doi:10.1063/1.359269
Repository Citation
Schoenbach, K. H.; Joshi, R. P.; Peterkin, F.; and Druce, R. L., "Supralinear Photoconductivity of Copper Doped Semi-Insulating Gallium Arsenide" (1995). Bioelectrics Publications. 247.
https://digitalcommons.odu.edu/bioelectrics_pubs/247
ORCID
0000-0001-7867-7773 (Schoenbach)
Comments
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 77 (10) 5298-5214 and may be found at https://doi.org/10.1063/1.359269.