Applied Physics Letters
The temporal development of the electric field distribution in semi‐insulating GaAs photoconductive switches operated in the linear and lock‐on mode has been studied. The field structure was obtained by recording a change in the absorption pattern of the switch due to the Franz–Keldysh effect at a wavelength near the band edge of GaAs. In the linear mode, a high field layer develops at the cathode contact after laser activation. With increasing applied voltage, domainlike structures become visible in the anode region and the switch transits into the lock‐on state, a permanent filamentary electrical discharge. Calibration measurements show the field intensity in these domains to exceed 40 kV/cm, which is greater than three times the value of the average applied field.
Original Publication Citation
Schoenbach, K. H., Kenney, J. S., Peterkin, F. E., & Allen, R. J. (1993). Temporal development of electric field structures in photoconductive GaAs switches. Applied Physics Letters, 63(15), 2100-2102. doi:10.1063/1.110803
Schoenbach, K. H.; Kenney, J. S.; Peterkin, F.E.; and Allen, R. J., "Temporal Development of Electric Field Structures in Photoconductive GaAs Switches" (1993). Bioelectrics Publications. 261.