Proceedings of the Sixth Applied Diamond Conference/Second Frontier Carbon Technology Joint Conference (ADC/FCT 2001)
Sixth Applied Diamond Conference/Second Frontier Carbon Technology Joint Conference (ADC/FCT 2001) Auburn, Alabama August 6-10, 2001
Homoepitaxial growth of boron-doped CVD diamond films was carried out on (100) and (111) oriented substrates. Atomic resolution images were obtained for both (100) and (111) surfaces using scanning tunneling microscopy. STM images reveal the presence of a 2x1-monohydride reconstruction for the untreated (100) surface and a lxl reconstruction for the untreated (111) surface. No other atomically resolved reconstructions were observed under a wide range of growth conditions. Non-aqueous electrochemical investigations were carried out on the films exhibiting atomically resolved reconstructions. Evidence for potential-induced surface-reconstruction and surface chemical modification of the (100) 2xl-monohydride surface has been observed.
Original Publication Citation
Cooper, J. B., Moulton, J. A., Albin, S., & Xiao, B. (2001). STM and electrochemical investigation of homoepitaxial boron-doped CVD diamond films. Paper presented at the Sixth Applied Diamond Conference/Second Frontier Carbon Technology Joint Conference(ADC/FCT 2001), Auburn, Alabama August 6-10, 2001.
Cooper, John B.; Moulton, Jason A.; Albin, Sacharia; and Xiao, Bing, "STM and Electrochemical Investigation of Homoepitaxial Boron-Doped CVD Diamond Films" (2001). Chemistry & Biochemistry Faculty Publications. 169.