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Reproducible Increased Mg Incorporation and Large Hole Concentration in GaN Using Metal Modulated Epitaxy, Shawn D. Burnham, Gon Namkoong, David C. Look, Bruce Clafin, W. Alan Doolittle Electrical & Computer Engineering Faculty Publications
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Metal Modulation Epitaxy Growth for Extremely High Hole Concentrations Above 10(19) cm(-3) in GaN, Gon Namkoong, Elaissa Trybus, Kyung Keun Lee, Michael Moseley, W. Alan Doolittle, David C. Look Applied Research Center Publications
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