Date of Award

Spring 2020

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical/Computer Engineering

Program/Concentration

Electrical & Computer Engineering

Committee Director

Sylvain Marsillac

Committee Member

Christian Zemlin

Committee Member

Orlando Ayala

Abstract

Intensive research has been carried out on III-V semiconductors for over a century due to their various applications in the field of Microelectronics, Optics, and Photonics. Among III-V materials, the III-nitrides, for example Aluminum Nitride, Indium Nitride, Gallium Nitride and their ternary alloys are known for their unique properties. All the III-Nitride Compounds are direct bandgap semiconductors with a bandgap ranging from 0.7 eV to 6.2 eV covering the entire visible region and extending to the UV region as well. Despite having many applications, fabricating good quality thin films without defects is quite a challenge. They are typically grown using a process called Molecular Beam Epitaxy (MBE) on substrates, such as sapphire or silicon carbide (SiC), but the process and materials are not very economical. The main aim of this thesis is to deposit high quality III-Nitrides thin films with the help of Reactive Magnetron Sputtering on various substrates. Various characterization techniques are used to analyze the samples and understand the effect of various deposition parameters on the quality of the films.

DOI

10.25777/kxfy-xz38

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