Date of Award

Spring 2000

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical & Computer Engineering

Program/Concentration

Electrical Engineering

Committee Director

Ravindra P. Joshi

Committee Member

Amin N. Dharamsi

Committee Member

Linda L. Vahala

Call Number for Print

Special Collections LD4331.E55 Z546

Abstract

Silicon Carbide is a very promising candidate for applications in high-power, high-temperature, and high-radiation conditions under which conventional semiconductors cannot perform adequately. However, the SiC processing technology has not yet reached maturity. There is also limited knowledge of its physical and chemical characteristics, and its device behavior is not well understood. The aim of this thesis is to analyze two specific problems in the SiC area. The first issue involves the large discrepancy between experimental I - V characteristics of SiC Schottky diodes and their theoretical values. The observed data, especially at low voltages, is found to be orders of magnitude larger than predicted by simple thermionic emission theory. A second problem is the premature breakdown in SiC p+n diodes seen to be associated with elementary screw dislocations.

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In Copyright. URI: http://rightsstatements.org/vocab/InC/1.0/ This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).

DOI

10.25777/q394-dn67

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