Document Type
Article
Publication Date
1995
DOI
10.1103/PhysRevB.52.1481
Publication Title
Physical Review B
Volume
52
Issue
3
Pages
1481-1484
Abstract
Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7×7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260°C for a coverage of 0.1 and 1 ML. © 1995 The American Physical Society.
Original Publication Citation
Tang, D., Elsayed-Ali, H. E., Wendelken, J., & Xu, J. (1995). Scanning-tunneling-microscopy study of Pb on Si(111). Physical Review B, 52(3), 1481-1484. doi:10.1103/PhysRevB.52.1481
Repository Citation
Tang, D.; Elsayed-Ali, H. E.; Wendelken, J.; and Xu, J., "Scanning-Tunneling-Microscopy Study of Pb on Si(111)" (1995). Electrical & Computer Engineering Faculty Publications. 116.
https://digitalcommons.odu.edu/ece_fac_pubs/116
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