ECS Journal of Solid State Science and Technology
Bonding of lift off resist (LOR) was performed to realize temporary wafer bonding without residue. Bonding process conditions such as spin speed, pre-bake temperature, and bonding temperature were optimized to obtain a large bonded area with high bond strength. Under optimized process conditions, a bonded area covering over 98% of the wafer surface, with a room temperature bond strength of nearly 5 J/m2 is achieved. During razor blade testing, fracture often occurs at the Si wafer. Moreover, debonding using an N-Methyl-2-pyrrolidone (NMP)-based solvent left the wafer surface extremely small amount of residue. Thus, the optimized bonding processed developed in this research is suitable for a clean temporary bonding process.
Original Publication Citation
Matsumae, T., Koehler, A. D., Greenlee, J. D., Anderson, T. J., Baumgart, H., Jernigan, G. G., . . . Kub, F. J. (2015). Temporary bonding with polydimethylglutarimide based lift off resist as a layer transfer platform. ECS Journal of Solid State Science and Technology, 4(7), P190-P194. doi:10.1149/2.0031507jss
Matsumae, T.; Koehler, A. D.; Greenlee, J. D.; Anderson, T. J.; Baumgart, H.; Jernigan, G. G.; Hobart, K. D.; and Kub, F. J., "Temporary Bonding with Polydimethylglutarimide Based Lift Off Resist as a Layer Transfer Platform" (2015). Electrical & Computer Engineering Faculty Publications. 146.