Physica Status Solidi (A) Applied Research
Thin films of indium sulphide containing oxygen have been synthesized following a dry physical process. The constituents are deposited by thermal evaporation on glass substrates and then annealed under argon flow. Polycrystalline β-In2S3 containing oxygen thin films are obtained as soon as the temperature of annealing is between 623 and 723 K. In this paper, these β-In2S3 thin films have optically been studied. The optical band gap is direct. Its value is not dependent on the temperature of annealing. It is about 2.8 eV, which is higher than that of β-In2S3 single crystal. This high value is related to the presence of oxygen in the films. The extinction coefficient k and the refractive index n of the films have also been found independent of the annealing temperature. These optical properties make the films studied good candidates to be substituted to CdS in Cu(In,Ga)Se2 based solar cells.
Original Publication Citation
Barreau, N., Marsillac, S., Bernède, J. C., Ben Nasrallah, T., & Belgacem, S. (2001). Optical properties of wide band gap indium sulphide thin films obtained by physical vapor deposition. Physica Status Solidi (A) Applied Research, 184(1), 179-186. doi:10.1002/1521-396X(200103)184:1<179::AID-PSSA179>3.0.CO;2-6
Barreau, N.; Marsillac, S.; Bernède, J. C.; Nasrallah, T. Ben; and Belgacem, S., "Optical Properties of Wide Band Gap Indium Sulphide Thin Films Obtained by Physical Vapor Deposition" (2001). Electrical & Computer Engineering Faculty Publications. 209.