Document Type
Article
Publication Date
2012
DOI
10.1063/1.4769902
Publication Title
Applied Physics Letters
Volume
101
Issue
23 (231910)
Pages
231910-1-231910-4
Abstract
In situ and ex situ characterization methods have been applied to investigate the properties of (Ag,Cu)InSe2 (ACIS) thin films. Data acquired from real time spectroscopic ellipsometry (RTSE) experiments were analyzed to extract the evolution of the nucleating, bulk, and surface roughness layer thicknesses. The evolution of these layer thicknesses suggests a transition from Volmer-Weber to Stranski-Krastanov type behavior when Cu is replaced by Ag. The complex dielectric functions of ACIS at both deposition and room temperature as a function of film composition were also extracted from the RTSE data, enabling parameterization of the alloy optical properties.
Original Publication Citation
Little, S.A., Ranjan, V., Collins, R.W., & Marsillac, S. (2012). Growth analysis of (Ag,Cu)InSe2 thin films via real time spectroscopic ellipsometry. Applied Physics Letters, 101(23 (231910)), 1-4. doi: 10.1063/1.4769902
Repository Citation
Little, S. A.; Ranjan, V.; Collins, R. W.; and Marsillac, S., "Growth Analysis of (Ag,Cu)InSe2 Thin Films Via Real Time Spectroscopic Ellipsometry" (2012). Electrical & Computer Engineering Faculty Publications. 21.
https://digitalcommons.odu.edu/ece_fac_pubs/21