Journal de Physique III
CuAlSe2 thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe2 films are obtained with some Cu2-δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe2 films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The films are nearly stoichiometric, but their surface is quite rough. The XPS spectra show that some Na diffuses from the substrate toward the surface during the annealing process. However, this Na is etched by KCN.
Original Publication Citation
Marsillac, S., Benchouk, K., El Moctar, C., Bernede, J. C., Pouzet, J., Khellil, A., & Jamali, M. (1997). CuAlSe² thin films obtained by chalcogenization. Journal de physique. III, 7(11), 2165-2169. doi:10.1051/jp3:1997249
Marsillac, S.; Benchouk, K.; Moctar, C. El; Bernède, J. C.; Pouzet, J.; Khellil, A; and Jamali, M., "CuAlSe² Thin Films Obtained by Chalcogenization" (1997). Electrical & Computer Engineering Faculty Publications. 211.