Proceedings of the Sixth Applied Diamond Conference/ Second Frontier Carbon Technology Joint Conference (ADC/FCT 2001)
Sixth Applied Diamond Conference/ Second Frontier Carbon Technology Joint Conference (ADC/FCT 2001), 6-10 August 2001, Auburn, AL; United States
Conducting epitaxial diamond films of high quality are essential for many diamond studies and diamond electronic device fabrication. We have grown boron-doped epitaxial diamond films on type Ila natural diamond (100) substrates by microwave plasma chemical vapor deposition. A gas mixture of H2/CH4 was used. Boron doping was done by placing solid sources of pure boron in the microwave plasma. Homoepitaxial films with atomic smoothness were achieved under the following growth conditions: substrate temperature 900 °C, gas pressure 40 Torr, and gas flow rates of H2/CH4 = 900/7.2 seem. The growth rate was 0.87 µm/hr. Surfaces of the homoepitaxial films were studied by scanning tunneling microscopy (STM). STM images show smooth and continuous surface with ripple-like features on micrometer scale. On nanometer scale, alternating terraces of 2x1 and 1x2 dimerization were clearly observed.
Original Publication Citation
Xiao, B., Fu, W., Albin, S., Moulton, J., & Cooper, J. (2001). Boron-doped homoepitaxial (100) diamond film investigated by scanning tunneling microscopy. Paper presented at the Sixth Applied Diamond Conference/Second Frontier Carbon Technology Joint Conference (ADC/FCT 2001), Auburn, AL, August 6-10, 2001.
Xiao, Bing; Fu, Weihai; Albin, Sacharia; Moulton, Jason; and Cooper, John, "Boron-Doped Homoepitaxial Diamond (100) Film Investigated by Scanning Tunneling Microscopy" (2001). Electrical & Computer Engineering Faculty Publications. 215.