Applied Physics Letters
Photoluminescence of cw laser-annealed silicon shows a dramatic difference in electronic behavior of the reconstructed material depending upon either creation or suppression of dislocations. Beyond a critical exposure time slip appears, and the luminescence of these samples is dominated by dislocation-related defect levels.
Original Publication Citation
Uebbing, R. H., Wagner, P., Baumgart, H., & Queisser, H. J. (1980). Luminescence in slipped and dislocation-free laser-annealed silicon. Applied Physics Letters, 37(12), 1078-1079. doi:10.1063/1.91869
Uebbing, R.H.; Wagner, P.; Baumgart, H.; and Queisser, H. J., "Luminescence in Slipped and Dislocation-Free Laser-Annealed Silicon" (1980). Electrical & Computer Engineering Faculty Publications. 237.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP publishing. This article appeared in Applied Physics Letters Volume 37, Issue 12, Pages 1078-1079, and may be found at http://dx.doi.org/10.1063/1.91869.