Document Type
Article
Publication Date
1988
DOI
10.1063/1.99451
Publication Title
Applied Physics Letters
Volume
52
Issue
6
Pages
483-485
Abstract
Low-temperature Raman scattering measurements were carried out to characterize Si-on-SiO2 structures formed by oxygen implantation and subsequent furnace or lamp annealing. The experiments were conducted with 413.1 nm laser light to probe only the thin Si layers at the top of the structures. The Raman spectra of the furnace-annealed samples are red shifted and broadened when compared with a virgin Si surface. The shifts and broadenings decrease with increasing annealing temperatures but they are still present in samples annealed above 1250°C for 3 h. No shifts or broadenings affect the Raman peaks of the layers, which were lamp annealed at 1405°C for half an hour. The red shifts indicate that the recrystallized Si layers are under tensile strains, whose origin is attributed to oxide precipitates. Quantitative estimates of the strains and associated stresses are obtained from the measured Raman shifts.
Original Publication Citation
Olego, D. J., Baumgart, H., & Celler, G. K. (1988). Strains in Si-on-SiO² structures formed by oxygen implantation: Raman scattering characterization. Applied Physics Letters, 52(6), 483-485. doi:10.1063/1.99451
Repository Citation
Olego, D.J.; Baumgart, H.; and Celler, G.K., "Strains in Si-onSiO2 Structures Formed By Oxygen Implantation: Raman Scattering Characterization" (1988). Electrical & Computer Engineering Faculty Publications. 238.
https://digitalcommons.odu.edu/ece_fac_pubs/238
Comments
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP publishing. This article appeared in Applied Physics Letters Volume 52, Issue 6, Pages 483-485, and may be found at http://dx.doi.org/10.1063/1.99451.