Document Type

Article

Publication Date

2000

DOI

10.1063/1.372061

Publication Title

Journal of Applied Physics

Volume

87

Issue

3

Pages

1182-1186

Abstract

Textured films of molybdenum disulfide have been obtained by solid state reaction between the constituents in thin films form when a (200) oriented tungsten sheet is used as substrate. The crystallites have their c axis perpendicular to the plane of the substrate. The annealing conditions are T=1073K and t=30 min. The films are stoichoimetric and p type. Such highly textured films are achieved without foreign atom addition (Ni, Co...). It appears, as shown by x-ray photoelectron spectroscopy, that a thin WS2 layer is present at the interface W/MoS2. The crystallization process is discussed by a van der Waals texturation (pseudoepitaxy) onto dangling bond sulfur terminated surfaces, these surfaces being ordered. After characterization of the W/MoS2 structure by x-ray diffraction and x-ray photoelectron spectroscopy, an upper electrode of tungsten was deposited by sputtering. The electrical properties of these W/MoS2/W structures have been investigated by analyzing the behavior of the current–voltage characteristics as a function of the measuring temperature. It is shown that an ohmic contact is obtained with a contact resistance smaller than the resistance of the MoS2 film.

Original Publication Citation

Gourmelon, E., Bernède, J.C., Pouzet, J., & Marsillac, S. (2000). Textured MoS2 thin films obtained on tungsten: Electrical properties of the W/MoS2 contact. Journal of Applied Physics, 87(3), 1182-1186. doi: 10.1063/1.372061

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