Applied Physics Letters
Morphology changes introduced by picosecond laser pulses at λ = 532 nm and 355 nm in (111) and (100) silicon samples are studied by means of optical and high-voltage electron microscopy. Depending on energy fluence, orientation and wavelength, amorphous or highly defective regions may be created. From an analysis of damage thresholds and damage depth distributions it is concluded that melting and energy confinement precedes the formation of the structural changes.
Original Publication Citation
Merkle, K. L., Baumgart, H., Uebbing, R. H., & Phillipp, F. (1982). Picosecond laser pulse irradiation of crystalline silicon. Applied Physics Letters, 40(8), 729-731. doi:10.1063/1.93207
Merkle, K. L.; Baumgart, H.; Uebbing, R.H.; and Phillipp, F., "Picosecond Laser Pulse Irradiation of Crystalline Silicon" (1982). Electrical & Computer Engineering Faculty Publications. 240.