Journal of Applied Physics
Depth profiles of the electrical quality of ion implanted and cw laser annealed p-n junctions in silicon are obtained for the first time by secondary ion mass spectroscopy. A comparison with the crystallographic properties of the surface and the junction as observed by Nomarski optical microscopy as well as cross-sectional and plan view transmission electron microscopy is made. Samples containing slip dislocations show better insulation and a lower reverse bias current across the p-n junction as compared to samples with a perfect surface in agreement with current-voltage characteristics. Small dislocation loops located at the junction are found to degrade the junction quality.
Original Publication Citation
Maier, M., Bimberg, D., Fernholz, G., Baumgart, H., & Phillipp, F. (1982). Electrical and structural properties of p-n junctions in cw laser annealed silicon. Journal of Applied Physics, 53(8), 5904-5907. doi:10.1063/1.331432
Maier, M.; Bimberg, D.; Fernholz, G.; Baumgart, H.; and Phillipp, F., "Electrical and Structural Properties of p-n Junctions in cw Laser Annealed Silicon" (1982). Electrical & Computer Engineering Faculty Publications. 243.