Applied Physics Letters
Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.
Original Publication Citation
Celler, G. K., Trimble, L. E., Ng, K. K., Leamy, H. J., & Baumgart, H. (1982). Seeded oscillatory growth of Si over SiO2 by cw laser irradiation. Applied Physics Letters, 40(12), 1043-1045. doi:10.1063/1.92998
Celler, G.K.; Trimble, L. E.; Ng, K.K.; Leamy, H.J.; and Baumgart, H., "Seeded Oscillatory Growth of Si Over SiO² by cw Laser Irradiation" (1982). Electrical & Computer Engineering Faculty Publications. 247.