Journal of Applied Physics
CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. Devices with efficiencies greater than 10% are fabricated on CuIn[sub 1-x]Al[sub x]Se[sub 2] material over a wide range of Al composition. The best device demonstrated 11% efficiency, and the open circuit voltage increases to 0.73 V.
Original Publication Citation
Paulson, P., Haimbodi, M., Marsillac, S., Birkmire, R., & Shafarman, W. (2002). Cuin[sub 1-x]al[sub x]se[sub 2] thin films and solar cells. Journal of Applied Physics, 91(12), 10153-10156. doi: 10.1063/1.1476966
Paulson, P. D.; Haimbodi, M. W.; Marsillac, S.; Birkmire, R. W.; and Shafarman, W. N., "CuIn1-xAlxSe2 Thin Films and Solar Cells" (2002). Electrical & Computer Engineering Faculty Publications. 25.