Document Type

Article

Publication Date

1986

DOI

10.1117/12.961210

Publication Title

SPIE Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III

Volume

0623

Pages

211-223

Conference Name

O-E/LASE'86 Symposium, Los Angeles, CA, 1986

Abstract

The purpose of the novel zone-melting recrystallization process (ZMR) is to produce single crystalline Si films on Si02 of high crystalline perfection, which are suitable for device fabrication and subsequent industrial applications. However, silicon films grown on amorphous insulating substrates without seeding contain regularly spaced subgrain boundaries as their predominant growth defect and to a lesser degree twin boundaries and some grain boundaries. Detailed materials studies have revealed the core structure of these extended defects and the fundamental mechanisms responsible for subgrain boundary formation. The nature and origin of subgrain boundaries is reviewed and a model for polygonization of the initial dislocation arrays is presented. In addition to subgrain boundary formation, silicon films on quartz are subject to microcracking due to thermal mismatch with the substrate. The influence of these residual growth defects and the inherent tensile stress on device performance is evaluated.

Comments

© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE)

Publisher's version available at: https://doi.org/10.1117/12.961210

Original Publication Citation

Baumgart, H. (1986). Silicon-on-insulator technology by crystallization on quartz substrates. Paper presented at the O-E/LASE'86 Symposium, Los Angeles, CA, 1986.

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