Applied Physics Letters
High-voltage electron microscopy (HVEM) has been used for the investigation of the defect structure in cw laser-annealed silicon. We report for the first time a (HVEM) analysis of the formation processes involved in the nucleation and glide of slip dislocations during epitaxial regrowth by cw laser annealing of ion-implantation damaged silicon layers. Based on the combined optical and HVEM observations a model of the dislocation generation and glide processes is presented.
Original Publication Citation
Baumgart, H., Phillipp, F., Rozgonyi, G. A., & Gösele, U. (1981). Slip dislocation formation during continuous wave laser annealing of silicon. Applied Physics Letters, 38(2), 95-97. doi:10.1063/1.92268
Baumgart, Helmut, "Slip Dislocation Formation During Continuous Wave Laser Annealing of Silicon" (1981). Electrical & Computer Engineering Faculty Publications. 277.