Document Type
Article
Publication Date
2009
DOI
10.1116/1.3151819
Publication Title
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume
27
Issue
4
Pages
696-699
Abstract
InN films were grown on Si(100) using femtosecond pulsed laser deposition. Laser induced breakdown of ammonia was used to generate atomic nitrogen for InN growth. An indium buffer layer was initially deposited on the Si substrate at low temperature followed by an InN intermediate layer. The crystal quality and surface morphology were investigated by reflection high-energy electron diffraction during growth and atomic force microscopy and x-ray diffraction after growth. The results showed that the In (2×1) initial buffer layer improved the quality of the InN film. High quality InN films were grown at a temperature of ∼350 °C.
Rights
© 2009 American Vacuum Society. All rights reserved.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in
Hafez, M. A., & Elsayed-Ali, H. E. (2009). Low-temperature growth of InN on Si(100) by femtosecond pulsed laser deposition [Article]. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 27(4), 696-699
and may be found at https://doi.org/10.1116/1.3151819.
Original Publication Citation
Hafez, M. A., & Elsayed-Ali, H. E. (2009). Low-temperature growth of InN on Si(100) by femtosecond pulsed laser deposition. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 27(4), 696-699. https://doi.org/10.1116/1.3151819
Repository Citation
Hafez, M. A. and Elsayed-Ali, H. E., "Low-Temperature Growth of InN on Si(100) by Femtosecond Pulsed Laser Deposition" (2009). Electrical & Computer Engineering Faculty Publications. 533.
https://digitalcommons.odu.edu/ece_fac_pubs/533
ORCID
0000-0002-1329-5018 (Elsayed-Ali)
Included in
Electronic Devices and Semiconductor Manufacturing Commons, Materials Science and Engineering Commons