Document Type

Article

Publication Date

2005

DOI

10.1116/1.2073427

Publication Title

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volume

23

Issue

6

Pages

1681-1686

Abstract

Indium was grown on Si (100) -2×1 at room temperature by femtosecond pulsed laser deposition. Reflection high-energy electron diffraction (RHEED) was performed in situ to study film morphology and in-plane lattice spacing. Indium was found to grow on Si (100) -2×1 by the Stranski-Krastanov mode. The initial two-dimensional In layer formed in the In-2×1 structure with a lattice constant of 3.65 Å. The full-width at half-maximum (FWHM) of the specular peak decreased during the growth, indicating an increase of the In islands size. Further In growth on the initial In-2×1 layer showed the formation of hexagonal, elongated, and hemispherical islands when examined ex situ by atomic force microscopy. The hexagonal islands were faceted and varied in size from ∼170 to ∼400 nm, with an average height of 5 nm. The elongated islands showed preferential growth orientation and had a length and height of ∼200 and ∼60 nm, respectively.

Rights

© 2005 American Vacuum Society. All rights reserved.

“This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in

Hafez, M. A., Hegazy, M. S., & Elsayed-Ali, H. E. (2005). Indium growth on Si(100)-2 × 1 by femtosecond pulsed laser deposition. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 23(6), 1681-1686.

and may be found at https://doi.org/10.1116/1.2073427.

Original Publication Citation

Hafez, M. A., Hegazy, M. S., & Elsayed-Ali, H. E. (2005). Indium growth on Si(100)-2 × 1 by femtosecond pulsed laser deposition. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 23(6), 1681-1686. https://doi.org/10.1116/1.2073427

ORCID

0000-0002-1329-5018 (Elsayed-Ali)

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