Document Type
Article
Publication Date
2006
DOI
10.2961/jlmn.2006.02.005
Publication Title
Journal of Laser Micro/Nanoengineering
Volume
1
Issue
2
Pages
111-114
Abstract
Pulsed laser deposition is used to fabricate multilayered Ge quantum-dot photodetector on Si(100). Growth was studied by reflection high-energy electron diffraction and atomic force microscopy. The difference in the current values in dark and illumination conditions was used to measure the device sensitivity to radiation. Spectral responsivity measurements reveal a peak around 2 μm, with responsity that increases three orders of magnitude as bias increases from 0.5 to 3.5 V.
Original Publication Citation
Hegazy, M., Refaat, T., Abedin, N., & Elsayed-Ali, H. (2006). Quantum-dot infrared photodetector fabricated by pulsed laser deposition technique. Journal of Laser Micro Nanoengineering, 1(2), 111-114. doi: 10.2961/jlmn.2006.02.005
Repository Citation
Hegazy, Mohammed; Refaat, Tamer; Abedin, Nurul; and Elsayed-Ali, Hani, "Quantum Dot Infrared Photodetector Fabricated by Pulsed Laser Deposition Technique" (2006). Electrical & Computer Engineering Faculty Publications. 64.
https://digitalcommons.odu.edu/ece_fac_pubs/64