Simulation Study of HEMT Structures With HfO2 Cap Layer For Mitigating Inverse Piezoelectric Effect Related Device Failures

Authors

Deepthi Nagulapally, Old Dominion University
Ravi P. Joshi, Old Dominion University
Aswini Pradhan

Document Type

Article

Publication Date

2015

DOI

10.1063/1.4905702

Publication Title

AIP Advances

Volume

5

Issue

1

Pages

1-12

Abstract

The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO₂ "cap layer" above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using "field plates" in concert with high-k oxides

Original Publication Citation

Nagulapally, D., Joshi, R. P., & Pradhan, A. (2015). Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures. AIP Advances, 5(1), 1-12. doi: 10.1063/1.4905702

Repository Citation

Nagulapally, Deepthi; Joshi, Ravi P.; and Pradhan, Aswini, "Simulation Study of HEMT Structures With HfO2 Cap Layer For Mitigating Inverse Piezoelectric Effect Related Device Failures" (2015). Electrical & Computer Engineering Faculty Publications. 75.
https://digitalcommons.odu.edu/ece_fac_pubs/75