Applied Physics Letters
Metal-Oxide-Semiconductor (MOS) capacitors with Bi2Te3 thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi2Te3 thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi2Te3, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metal - oxide - semiconductor compatibility, the Bi2Te3 embedded MOS structures are very interesting for memory application. © 2014 AIP Publishing LLC.
Original Publication Citation
Yuan, H., Zhang, K., Li, H., Zhu, H., Bonevich, J. E., Baumgart, H., ... & Li, Q. (2014). Polarization of Bi2Te3 thin film in a floating-gate capacitor structure. Applied Physics Letters, 105(23), 233505.
Yuan, Hui; Zhang, Kai; Li, Haitao; Zhu, Hao; Bonevich, John E.; Baumgart, Helmut; Richter, Curt A.; and Li, Qiliang, "Polarization of Bi2Te3 Thin Film in a Floating-Gate Capacitor Structure" (2014). Electrical & Computer Engineering Faculty Publications. 76.