Applied Physics Letters
Silicon-doped n-type gallium arsenide crystals, compensated with diffused copper, were studied with respect to their application as photoconductive, high-power closing switches. The attractive features of GaAs:Cu switches are their high dark resistivity, their efficient activation with Nd:YAG laser radiation, and their microsecond conductivity decay time constant. In the authors' experiment, electric fields are high as 19 kV/cm were switched, and current densities of up to 10 kA/cm2 were conducted through a closely compensated crystal. At field strengths greater than approximately 10 kV/cm, a voltage `lock-on' effect was observed.
Original Publication Citation
Mazzola, M. S., Schoenbach, K. H., Lakdawala, V. K., Germer, R., Loubriel, G. M., & Zutavern, F. J. (1989). GaAs photoconductive closing switches with high dark resistance and microsecond conductivity decay. Applied Physics Letters, 54(8), 742-744. doi:10.1063/1.100879
Mazzola, M. S.; Schoenbach, K. H.; Lakdawala, V. K.; Germer, R.; Loubriel, G. M.; and Zutavern, F. J., "GaAs Photoconductive Closing Switches with High Dark Resistance and Microsecond Conductivity Decay" (1989). Electrical & Computer Engineering Faculty Publications. 87.