Journal of Applied Physics
The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (NCu/NSi) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.
Original Publication Citation
Ko, S. T., Lakdawala, V. K., Schoenbach, K. H., & Mazzola, M. S. (1990). Influence of copper doping on the performance of optically controlled GaAs switches. Journal of Applied Physics, 67(2), 1124-1126. doi:10.1063/1.345780
Ko, St. T.; Lakdawala, V. K.; Schoenbach, K. H.; and Mazzola, M. S., "Influence of Copper Doping on the Performance of Optically Controlled GaAs Switches" (1990). Electrical & Computer Engineering Faculty Publications. 90.