European Physical Journal: Applied Physics
Ge quantum dot formation on Si(1 0 0)-(2 × 1) by nanosecond pulsed laser deposition under laser excitation was investigated. Scanning tunneling microscopy was used to probe the growth mode and morphology. Excitation was performed during deposition using laser energy density of 25-100 mJ/cm 2. Faceted islands were achieved at a substrate temperature of ∼250 °C only when using laser excitation. The island morphology changes with increased laser excitation energy density although the faceting of the individual islands remains the same. The size of the major length of islands increases with the excitation laser energy density. A purely electronic mechanism of enhanced surface diffusion of the Ge adatoms is proposed. © 2014 EDP Sciences.
Original Publication Citation
Oguz Er, A., & Elsayed-Ali, H. E. (2014). STM study of pulsed laser assisted growth of Ge quantum dot on Si(1 0 0)-(2 × 1). European Physical Journal: Applied Physics, 65(2), 20401. doi:10.1051/epjap/2013130266
Er, Ali Orguz and Elsayed-Ali, Hani E., "STM Study of Pulsed Laser Assisted Growth of Ge Quantum Dot on Si(1 0 0)-(2 × 1)" (2014). Electrical & Computer Engineering Faculty Publications. 91.