Date of Award

Fall 2002

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical & Computer Engineering

Program/Concentration

Electrical Engineering

Committee Director

Ravindra P. Joshi

Committee Member

Vijayan Asari

Committee Member

Linda Vahala

Call Number for Print

Special Collections LD4331.E55 G86 2002

Abstract

The present research is aimed at ascertaining the usefulness of InAs semiconductor material for single photon avalanche photo detectors operating in the Geiger mode at 2 μm wavelengths. InAs is considered as the material suitable for the purpose because of its less bandgap and lower effective mass of the electrons when compared to other semiconductor materials presently in use. Hence, theoretically transient transport properties of bulk InAs are superior and the velocity overshoot phenomena stronger. InAs is a relatively less explored material when compared to other materials like GaAs. The choice of the material is justified with thorough exploration of InAs.

The focus of this research is on the high-field transport of InAs and to obtain both the transient and steady state response characteristics using the Monte Carlo technique. Theoretical evaluations of the avalanche multiplication and related excess noise factor are also made. The results have been carefully compared with the available experimental data. The overall conclusion is that the InAs semiconductor material is suitable for the purpose of applications requiring high speed and high sensitivity.

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DOI

10.25777/mvfr-s365

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