Date of Award

Spring 1990

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical & Computer Engineering

Program/Concentration

Electrical Engineering

Committee Director

Sacharia Albin

Committee Member

Hasan Erkaya

Committee Member

Ravindra Joshi

Call Number for Print

Special Collections LD4331.E55W37

Abstract

In this research work, the results of an experimental investigation on the electrical conduction mechanism in type Ιa and Ilb diamonds are presented. These results are compared with those of previous theoretical studies. The basic physical properties of diamond are discussed. Details of ohmic contact formation on diamond are presented.

The current-voltage characteristics revealed the presence of traps located below the Fermi level. The unfilled trap density was determined. The deep traps were further studied using spectroscopic photoconductivity measurements and the trap energy levels were determined.

The effects of hydrogenation on trap related conduction were studied subsequently. Hydrogenation was carried out in both rf and microwave plasma and found to be a diffusion limited process, independent of plasma density. Upon hydrogenation the conductivity of diamond samples increased by ten orders of magnitude, which was shown to be due to the passivation of deep traps by hydrogen. The amount of hydrogen introduced into the diamond was determined. It is concluded that the performance of diamond devices will be significantly affected by hydrogenation.

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In Copyright. URI: http://rightsstatements.org/vocab/InC/1.0/ This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).

DOI

10.25777/kwva-sk96

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