Optical Properties of Wide Band Gap Indium Sulphide Thin Films Obtained by Physical Vapor Deposition

Authors

N. Barreau
S. Marsillac, Old Dominion UniversityFollow
J. C. Bernède
T. Ben Nasrallah
S. Belgacem

Document Type

Article

Publication Date

2001

DOI

10.1002/1521-396X(200103)184:1<179::AID-PSSA179>3.0.CO;2-6

Publication Title

Physica Status Solidi (A) Applied Research

Volume

184

Issue

1

Pages

179-186

Abstract

Thin films of indium sulphide containing oxygen have been synthesized following a dry physical process. The constituents are deposited by thermal evaporation on glass substrates and then annealed under argon flow. Polycrystalline β-In₂S₃ containing oxygen thin films are obtained as soon as the temperature of annealing is between 623 and 723 K. In this paper, these β-In₂S₃ thin films have optically been studied. The optical band gap is direct. Its value is not dependent on the temperature of annealing. It is about 2.8 eV, which is higher than that of β-In₂S₃ single crystal. This high value is related to the presence of oxygen in the films. The extinction coefficient k and the refractive index n of the films have also been found independent of the annealing temperature. These optical properties make the films studied good candidates to be substituted to CdS in Cu(In,Ga)Se₂ based solar cells.

Original Publication Citation

Barreau, N., Marsillac, S., Bernède, J. C., Ben Nasrallah, T., & Belgacem, S. (2001). Optical properties of wide band gap indium sulphide thin films obtained by physical vapor deposition. Physica Status Solidi (A) Applied Research, 184(1), 179-186. doi:10.1002/1521-396X(200103)184:1<179::AID-PSSA179>3.0.CO;2-6

Repository Citation

Barreau, N.; Marsillac, S.; Bernède, J. C.; Nasrallah, T. Ben; and Belgacem, S., "Optical Properties of Wide Band Gap Indium Sulphide Thin Films Obtained by Physical Vapor Deposition" (2001). Electrical & Computer Engineering Faculty Publications. 209.
https://digitalcommons.odu.edu/ece_fac_pubs/209

ORCID

0000-0003-0826-8119 (Marsillac)