Document Type

Article

Publication Date

2015

DOI

10.1116/1.4913863

Publication Title

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volume

33

Issue

3

Pages

031201

Abstract

Cu (In,Ga,Al)Se2 (CIGAS) thin films were studied as an alternative absorber layer material to Cu(InxGa1-x)Se2. CIGAS thin films with varying Al content were prepared by magnetron sputtering on Si(100) and soda-lime glass substrates at 350 °C, followed by postdeposition annealing at 520 °C for 5 h in vacuum. The film composition was measured by an electron probe microanalyzer while the elemental depth profiles were determined by secondary ion mass spectrometry. X-ray diffraction studies indicated that CIGAS films are single phase with chalcopyrite structure and that the (112) peak clearly shifts to higher 2θ values with increasing Al content. Scanning electron microscopy images revealed dense and well-defined grains, as well as sharp CIGAS/Si(100) interfaces for all films. Atomic force microscopy analysis indicated that the roughness of CIGAS films decreases with increasing Al content. The bandgap of CIGAS films was determined from the optical transmittance and reflectance spectra and was found to increase as Al content increased.

Comments

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films and may be found at https://doi.org/10.1116/1.4913863.

Original Publication Citation

Hameed, T. A., Cao, W., Mansour, B. A., Elzawaway, I. K., Abdelrazek, E. M. M., & Elsayed-Ali, H. E. (2015). Properties of Cu(In,Ga,Al)Se2 thin films fabricated by magnetron sputtering. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 33(3), 031201. doi:10.1116/1.4913863

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