Document Type
Article
Publication Date
2021
DOI
10.3390/ma14133596
Publication Title
Materials
Volume
14
Issue
13
Pages
3596 (1-9)
Abstract
Cu(In,Ga)Se2 (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium.
Original Publication Citation
Poudel, D., Belfore, B., Ashrafee, T., ... Rajan, G., Rockett, A., & Marsillac, S. (2021). Analysis of post-deposition recrystallization processing via indium bromide of Cu(In,Ga)Se2 thin films. Materials, 14(13), 1-9, Article 3596. https://doi.org/10.3390/ma14133596
Repository Citation
Poudel, D., Belfore, B., Ashrafee, T., ... Rajan, G., Rockett, A., & Marsillac, S. (2021). Analysis of post-deposition recrystallization processing via indium bromide of Cu(In,Ga)Se2 thin films. Materials, 14(13), 1-9, Article 3596. https://doi.org/10.3390/ma14133596
ORCID
0000-0001-8069-8602 (Poudel), 0000-0002-3173-8505 (Karki), 0000-0003-4000-6928 (Rajan), 0000-0003-0826-8119 (Marsillac)
Comments
© 2021 by the authors.
This is an open access article distributed under the Creative Commons Attribution 4.0 International (CC BY 4.0) License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited